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2SD596 [BL Galaxy Electrical]

Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
2SD596
型号： 2SD596
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

Silicon Epitaxial Planar Transistor
硅外延平面晶体管

晶体 晶体管 光电二极管 放大器
文件： 总4页 (文件大小：265K)
中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SD596  
FEATURES  
Pb  
Lead-free  
z
z
z
Micro package.  
Complementary to 2SB624 PNP Transistor.  
High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA)  
APPLICATIONS  
z
Audio frequency general purpose amplifier applications.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
DV1/DV2/DV3/DV4/DV5  
Package Code  
SOT-23  
2SD596  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
Collector-Base Voltage  
VCBO  
30  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
25  
V
5
V
Collector Current -Continuous  
Collector Dissipation  
700  
200  
mA  
mW  
℃
PC  
Junction and Storage Temperature  
Tj,Tstg  
-55~150  
Document number: BL/SSSTC024  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SD596  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Parameter  
Symbol  
Test conditions  
MIN  
30  
25  
5
TYP  
MAX UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100μA,IE=0  
IC=1mA,IB=0  
IE=100μA,IC=0  
VCB=30V,IE=0  
VEB=5V,IC=0  
V
V
V
Collector-emitter breakdown  
voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
0.1  
μA  
μA  
Emitter cut-off current  
IEBO  
0.1  
VCE=1V,IC=100mA  
VCE=1V,IC=700mA  
110  
50  
200  
400  
DC current gain  
hFE  
Collector-emitter saturation voltage  
IC=700mA, IB=70mA  
VCE(sat)  
0.22 0.6  
V
Base to Emitter voltage  
Transition frequency  
Output capacitance  
VCE=6V,IC=10mA  
VBE  
fT  
600  
170  
640  
12  
700  
V
VCE=6V, IE= -10mA  
VCB=6V, IE=0,f=10kHz  
MHz  
pF  
Cob  
CLASSIFICATION OF hFE(1)  
Range  
Marking  
110-180  
DV1  
135-220  
DV2  
170-270  
DV3  
200-320  
DV4  
250-400  
DV5  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTC024  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SD596  
Document number: BL/SSSTC024  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Transistor  
2SD596  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
E
K
B
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
G
H
J
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
2SD596  
3000/Tape&Reel  
Document number: BL/SSSTC024  
Rev.A  
www.galaxycn.com  
4

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